mar-19-2003 1 bby57... silicon tuning diode excellent linearity high q hyperabrupt tuning diode low series resistance high capacitance ratio designed for low tuning voltage operation for vco's in mobile communications equipment for control elements such as tcxos and vcxos BBY57-02L bby57-02v bby57-02w bby57-05w type package configuration l s (nh) marking BBY57-02L* bby57-02v bby57-02w bby57-05w tslp-2 sc79 scd80 sot323 single single single common cathode 0.4 0.6 0.6 1.4 55 5 55 d5s * preliminary maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 10 v forward current i f 20 ma operating temperature range t op -55 ... 125 c storage temperature t stg -55 ... 150
mar-19-2003 2 bby57... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 8 v v r = 8 v, t a = 85 c i r - - - - 10 100 na ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 2.5 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz c t 16.5 - - 3.5 17.5 9.35 7 4.7 18.6 - - 5.5 pf capacitance ratio v r = 1 v, v r = 3 v, f = 1 mhz c t1 / c t3 - 2.45 - capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz c t1 / c t4 3 3.7 4.5 series resistance v r = 1 v, f = 470 mhz, BBY57-02L v r = 1 v, f = 470 mhz, all others r s - - 0.35 0.3 - -
mar-19-2003 3 bby57... diode capacitance c t = (v r ) f = 1mhz 0 0.5 1 1.5 2 2.5 3 v 4 v r 0 5 10 15 20 25 30 pf 40 c t normalized diode capacitance c (ta) / c (25c) = ( t a ); f = 1mhz -30 -10 10 30 50 70 c 100 t a 0.95 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 - 1.06 c ta / c 25 1v 4v temperature coefficient of the diode capacitance t cc = ( v r ) 0 0.5 1 1.5 2 2.5 3 v 4 v r -4 10 -3 10 -2 10 1/c tc c
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